型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: 晶体管描述: 射频MOSFET行射频功率场效应晶体管N沟道增强型MOSFET The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET35051+￥1091.538610+￥1053.239050+￥1048.4516100+￥1043.6641150+￥1036.0042250+￥1029.3018500+￥1022.59931000+￥1014.9394 -
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品类: 晶体管描述: 射频功率场效应晶体管150 W， 50 V， 175 MHz的N沟道MOSFET宽带 RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET61991+￥359.846510+￥350.459250+￥343.2623100+￥340.7590200+￥338.8815500+￥336.37831000+￥334.81372000+￥333.2492 -
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品类: 晶体管描述: 氮化镓HEMT脉冲功率晶体管3.1 - 3.5 GHz频段，峰值120W ， 300US脉冲， 10 ％占空比 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty37821+￥3807.122010+￥3772.511825+￥3755.206750+￥3737.9016100+￥3720.5965150+￥3703.2914250+￥3685.9863500+￥3668.6812 -
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品类: 晶体管描述: 氮化镓HEMT脉冲功率晶体管2.7 - 3.1 GHz的峰值30W ， 500US脉冲，占空比为10％ GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle95451+￥2407.053010+￥2385.170725+￥2374.229650+￥2363.2884100+￥2352.3473150+￥2341.4061250+￥2330.4650500+￥2319.5238
